Work

Research of single event burnout in a high-performance radiation-hardened SOI lateral power MOSFET

Year: 2022

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2021.114475

Authors: Yue Wang, Lixin Wang, Min Guo, Runze Chen, Shixin Wang, Yongchao Jiang

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4207065598

FWCI: 0.411

Cites: 34

Cited by: 7

Related to: 10