Recombination Time Mismatch and Spin Dependent Photocurrent at a Ferromagnetic-Metal–Semiconductor Tunnel Junction
Year: 2022
Type: article
Abstract: We report on carrier dynamics in a spin photodiode based on a ferromagnetic-metal-GaAs tunnel junction. We show that the helicity-dependent current is determined not only by the electron spin polarization and spin asymmetry of the tunneling but in great part by a dynamical factor resulting from the competition between tunneling and recombination in the semiconductor, as well as by a specific quantity: the charge polarization of the photocurrent. The two latter factors can be efficiently controlled through an electrical bias. Under longitudinal magnetic field, we observe a strong increase of the signal arising from inverted Hanle effect, which is a fingerprint of its spin origin. Our approach represents a radical shift in the physical description of this family of emerging spin devices.
Source: Physical Review Letters
Authors: Viatcheslav I. Safarov, Igor V. Rozhansky, Ziqi Zhou, Bo Xu, Zhongming Wei, Zhan-Guo Wang, Yuan Lu, Henri Jaffrès, Henri-Jean Drouhin
Institutions: Centre National de la Recherche Scientifique, École Polytechnique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Institut Rayonnement-Matière de Saclay, Institut Polytechnique de Paris, Ioffe Institute, Chinese Academy of Sciences, Institut Jean Lamour, Institute of Semiconductors, University of Chinese Academy of Sciences, Université de Lorraine, Université Paris-Saclay, Laboratoire Albert Fert
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
Awards: Ferroelectric control of organic/ferromagnetic spinterface, Electrical control of spin injection in spin-LEDs via spin-transfer effect without magnetic field, Paris-Saclay multidisciplinary Nano-Lab, Spin Injection/detection at Zero Magnetic field in spinOptronics devices based on 2D semiconductors, G7733280061
OpenAlex ID: W4210782049