Year: 2022
Type: article
Abstract: We demonstrate that a lightly strained germanium channel (ε//=−0.41%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole gas with mobility in excess of 1×106 cm2/Vs and percolation density less than 5×1010 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effects at low densities and low magnetic fields. The low-disorder and small effective mass (0.068me) defines lightly strained germanium as a basis to tune the strength of the spin–orbit coupling for fast and coherent quantum hardware.
Source: Applied Physics Letters
DOI: 10.1063/5.0083161
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4221105378