Work

Characterization methods for defects and devices in silicon carbide

Year: 2022

Type: article

Abstract: Significant progress has been achieved with silicon carbide (SiC) high power electronics and quantum technologies, both drawing upon the unique properties of this material. In this Perspective, we briefly review some of the main defect characterization techniques that have enabled breakthroughs in these fields. We consider how key data have been collected, interpreted, and used to enhance the application of SiC. Although these fields largely rely on separate techniques, they have similar aims for the material quality and we identify ways in which the electronics and quantum technology fields can further interact for mutual benefit.

Source: Journal of Applied Physics

DOI: 10.1063/5.0077299

Authors: M. E. Bathen, C. T.-K. Lew, J. Woerle, C. Dorfer, U. Grossner, S. Castelletto, B. C. Johnson

Institutions: ETH Zurich, The University of Melbourne, RMIT University, Centre for Quantum Computation and Communication Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4223436251

FWCI: 3.287

Cites: 162

Cited by: 60

Related to: 10