Work

Effect of Bi doping on the thermoelectric properties of Mg2Si0.3Ge0.04Sn0.66 compound

Year: 2022

Type: article

Abstract: N-type Bi-doped Mg2(Si0.3Ge0.04Sn0.66)1-xBix (0<x≤0.03) compounds were successfully fabricated by solid state reaction-spark plasma sintering (SPS). The XRD results indicate that all prepared samples are nearly phase pure Bi-doped solid solutions. The lattice constant and the electrical conductivity of the samples increases while the Seebeck coefficient decreases with the increase of the doped Bi content. The figure of merit (ZT) decreases at a low temperature but increases at a high temperature while increasing the Bi content. At the temperature of 800K, ZT value at x = 0.03 is about 1.3, comparing to 1.1 for x = 0.01.

Source: Journal of Materials Research and Technology

DOI: 10.1016/j.jmrt.2022.04.043

Authors: Jia Ju, Kang Yin, Mengfei Fang, Hong Cai, Huan Liu

Institutions: Nanjing Institute of Technology, Hohai University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,300

Funders: Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, Nanjing Institute of Technology