Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device

Year: 2022

Type: article

Abstract: We investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Based on the variable-range hopping (VRH) theory, a general model predicting the Seebeck effect is developed to reveal the thermoelectric properties in GD-OSs. The proposed model could interpret the experimental data on carrier concentration- and temperature-dependence of the Seebeck coefficient, including various kinds of conducting polymer film and small molecule based field-effect transistors (FETs). Compared with the conventional Mott's VRH and mobility edge model, our model has a much better description of the relationship between the Seebeck coefficient and conductivity. The model could deepen our insight into charge transport in organic semiconductors and provide instructions for the optimization of thermoelectric device performance in a disordered system.

Source: Micromachines

DOI: 10.3390/mi13050707

Authors: Ying Zhao, Jiawei Wang

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,094

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Key Laboratory of Microelectronic Devices Integrated Technology, Chinese Academy of Sciences, Institute of Microelectronics of the Chinese Academy of Sciences, National Key Research and Development Program of China

OpenAlex ID: W4225142417