Work

In operando charge transport imaging of atomically thin dopant nanostructures in silicon

Year: 2022

Type: article

Abstract: . Our experimental methodology will facilitate rapid feedback for the fabrication of patterned nanoscale dopant device components in silicon, now important for the emerging field of silicon quantum information technology. More generally, the versatile setup, with its advanced inspection capabilities, delivers a comprehensive method to determine the performance of nanoscale devices while they function, in a broad range of material systems.

Source: Nanoscale

DOI: 10.1039/d1nr08381c

Authors: Alexander Kölker, Georg Gramse, Taylor J. Z. Stock, Gabriel Aeppli, Neil J. Curson