β-Ga 2 O 3 heterojunction field-effect transistors prepared via UV laser-assisted p-doping of two-dimensional WSe 2
Year: 2022
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d1tc06157g
Authors: Sanghyun Moon, Jinho Bae, Jihyun Kim
Institutions: Seoul National University, Korea University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G1096496656, G7878941583
OpenAlex ID: W4226249529