Increase in the efficiency of III-nitride micro LEDs by atomic layer deposition
Year: 2022
Type: article
Abstract: The effect of atomic-layer deposition (ALD) sidewall passivation on the enhancement of the electrical and optical efficiency of micro-light-emitting diode (µ-LED) is investigated. Various blue light µ-LED devices (from 5 × 5 µm 2 to 100 × 100 µm 2 ) with ALD-Al 2 O 3 sidewall passivation were fabricated and exhibited lower leakage and better external quantum efficiency (EQE) comparing to samples without ALD-Al 2 O 3 sidewall treatment. Furthermore, the EQE values of 5 × 5 and 10 × 10 µm 2 devices yielded an enhancement of 73.47% and 66.72% after ALD-Al 2 O 3 sidewall treatments process, and the output power also boosted up 69.3% and 69.9%. The Shockley-Read-Hall recombination coefficient can be extracted by EQE data fitting, and the recombination reduction in the ALD samples can be observed. The extracted surface recombination velocities are 551.3 and 1026 cm/s for ALD and no-ALD samples, respectively.
Source: Optics Express
DOI: 10.1364/oe.455726
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Awards: G1026091994, Multiple Luminescent Downshifting Effect for Enhancement of Solar Cell Efficiency, An Innovative Perovskite Quantum-Dot Micro-Display with Highly Integrated Communication Module for 5g Iot Applications( II ), The Development of the Wearable Physiological Detection: High Speed Green Micro Light-Emitting Diodes Epitaxial and Chip Process Development, High Resolution Near-eye Display Technology for the VR/AR Applications( I )
OpenAlex ID: W4229027942