Work

Investigation of total ionizing dose effects in 4H–SiC power MOSFET under gamma ray radiation

Year: 2022

Type: article

Source: Radiation Physics and Chemistry

DOI: 10.1016/j.radphyschem.2022.110219

Authors: Yabin Sun, Xin Wan, Ziyu Liu, Hu Jin, Junzheng Yan, Xiaojin Li, Yanling Shi

Institutions: Fudan University, State Key Laboratory of ASIC and System, East China Normal University, Tsinghua University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shanghai, National Natural Science Foundation of China, Science and Technology Innovation Plan Of Shanghai Science and Technology Commission

Awards: G1320782013, G4364304798, G6801240598

OpenAlex ID: W4229364803

FWCI: 2.074

Cites: 24

Cited by: 40

Related to: 10