Year: 2009
Type: article
Abstract: We studied the infrared (IR) and thermoelectric properties of (Bi x Te y +Cd) and (Bi x Te y +InSb) alloyed thin films prepared on SiO 2 glass substrates by electron beam evaporation (EB).Cd was used in terms of the enhancement of sensitivity to IR radiation because CdTe is known to be highly sensitive to IR radiation.The voltage sensitivities were 0.71 and 43.9 mV for Bi 2 Te 2.4 and Bi 2 Cd 2.6 Te 5.5 , respectively, at a bias current of 10 mA and a blackbody furnace temperature of 1000°C.The maximum values of the power factor (P f ) were 1.15×10 -3 W/mK 2 at 450 K for Bi 2 Te 2.4 , 2.46×10 -4 W/mK 2 at 550 K for Bi 2 Te 3.6 +InSb 6 , and 8.90×10 -6 W/mK 2 at 550 K for InSb 2.2 .
Source: Sensors and Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $748
OpenAlex ID: W4231534137