Work

Ion-implanted complementary MOS transistors in low-voltage circuits

Year: 1972

Type: conference-paper

Source: Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

DOI: 10.1109/isscc.1972.1155118

Authors: R. Swanson, J. Meindl

Institution: Stanford University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4237030520

FWCI: 27.62

Cites: 3

Cited by: 323

Related to: 10