Work

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

Year: 2012

Type: article

Abstract: In this work, the threading dislocation suppression effects of InAs/In 0.52 Al 0.48 As digital alloy intermediate layers in an InP-based InAlAs graded metamorphic buffer were investigated to improve the structural and optical qualities of the buffer. Cross-sectional transmission electron microscopy, atomic force microscopy, and photoluminescence measurements proved that the insertion of thin digital alloy layers in the graded buffer markedly improves the surface quality, decreases the threading dislocation density, and enhances the photoluminescence efficiency of In 0.8 Ga 0.2 As/In 0.8 Al 0.2 As quantum wells. This study shows great potentials by incorporating digital alloy intermediate layers in metamorphic buffers to improve the quality of metamorphic devices.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.51.080205

Authors: Yi Gu, Yonggang Zhang, Kai Wang, Xiang Fang, Kehui Liu

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Functional Materials for Informatics

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

Awards: G1921370159, 中红外宽调谐外腔量子级联激光器的研究, G6850238768