Work

ChemInform Abstract: DIFFUSION OF ION‐IMPLANTED B IN HIGH CONCENTRATION P‐ AND AS‐DOPED SILICON

Year: 1975

Type: article

Source: ChemInform

DOI: 10.1002/chin.197548007

Authors: RICHARD B. FAIR, PAUL N. PAPPAS

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4239920766

FWCI:

Cites: 1

Cited by:

Related to: 10