Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Year: 2018
Type: book-chapter
Abstract: The effect of sulfur passivation of the surface of Ge0.83Sn0.17 is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the interfacial property between HfO2 and Ge0.83Sn0.17. Sulfur passivation is effective in reducing both the Ge oxides and Sn oxides formation and the Sn atoms segregation. In addition, sulfur passivation reduces the interface trap density Dit at the HfO2/Ge0.83Sn0.17 interface from the valence band edge to the midgap. After the implementation of sulfur passivation, Ge0.83Sn0.17 p-MOSFETs show improved subthreshold swing S and effective hole mobility μeff. 25% μeff enhancement can be observed in Ge0.83Sn0.17 p-MOSFETs with sulfur passivation at a high inversion carrier density Ninv of 1 × 1013 cm−2.
Source: InTech eBooks
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4256120803