OpenAlex | Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer

Large Gate Swing and High Threshold Voltage Enhancement-Mode AlGaN/GaN HEMTs Using Low Energy Fluorine Ion Implantation in GaN Layer

Work

Year: 2015

Type: article

Source: Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM)

Authors Chia-Hsun Wu, Ping-Cheng Han, Edward Yi Chang

Institution National Yang Ming Chiao Tung University

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Cited by: 1

Related to: 10

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Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Sustainable Development Goal Affordable and clean energy

Open Access status: closed