Year: 2009
Type: dissertation
Abstract: In this thesis a compact drain current model for nanoscale double-gate MOSFETs is presented. The model covers all operation regimes and bias voltages up to 0.4V. The modeling is done using conformal mapping techniques to solve the 2D Laplace equation in sub-threshold, and using a long channel model in strong-inversion. In near threshold, a quasi-Fermi level model which uses empirical constants is used to find the current. A continuous model is found by expressing asymptotes in the sub-threshold and strong inversion regimes, and combining them using a interpolation function. The interpolation function uses a parameter that is decided analytically from the near threshold calculations. The model shows good agreement with numerical simulations for bias voltages below 0.4V and channel lengths bellow 50nm.
Source: BIBSYS Brage (BIBSYS (Norway))
Author: Åsmund Holen
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W427302735