Year: 2022
Type: article
Abstract: Nanostructures have a significant promise as potential building blocks for the next generation of thermoelectric devices. While the thermal transport properties of bulk materials have been intensely studied, the understanding of nanostructure thermoelectric properties and their interrelation is still incomplete. In the calculated temperature range, the thermoelectric power (TEP) was linearly dependent on temperature, suggesting the degenerate nature of the ZnO semiconductor nanowire similar to that of the GaN semiconductor nanowire. Observed negative values of TEP indicating that majority charge carriers are electrons in ZnO semiconductor. Linear dependence of TEP with temperature shows that TEP is only due to electron diffusion and not due to the phonon-drag effect. Also observed, the calculated TEP values agree with the experimental results in the overall temperature range 10 – 300 K.
Author: Kasala Suresha
Institution: Government of Karnataka
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4280614694