Pristine PN junction toward atomic layer devices
Work
Year: 2022
Type: article
Abstract: In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires th... more
Source: Light Science & Applications
Institutions Shanghai Institute of Technical Physics, Nantong University, University of Chinese Academy of Sciences
Cites: 39
Cited by: 31
Related to: 10
FWCI: 2.888
Citation percentile (by year/subfield): 100
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
APC paid (est): $3,348