Work

High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer

Year: 2022

Type: article

Abstract: In this work, the effect of high temperature molten KOH wet etching on GaN/AlGaN epilayer has been investigated for different family of dislocations. The high etching temperature (up to 510°C) allows a good definition of the pits, making easy the observation and the counts. Such high temperature will allow a detailed study on the statistical distribution of the dislocations on whole wafer by optical microscope for screw/mixed dislocation. A comparison on dislocation density between AlGaN/GaN structure grown on Si (111) substrate and 4H-SiC substrate has been performed.

Source: Materials science forum

DOI: 10.4028/p-0b73tf

Authors: Ruggero Anzalone, Giuseppe Greco, Fabrizio Roccaforte, Patrick Fiorenza, Nicolo Piluso, Andrea Severino

Institutions: STMicroelectronics (Italy), Institute for Microelectronics and Microsystems

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4281756884

FWCI:

Cites: 6

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Related to: 10