Year: 2022
Type: article
Abstract: 3C silicon carbide is a semiconductor with remarkable properties, making it ideal for the development of long lasting devices, working in harsh environments and under high particle flows. The most significant obstacle to its wider diffusion is the presence of extended, bidimensional and linear defects in its crystal lattice. The purpose of this research is to automatically recognize defects from a TEM image by algorithm that calculates distances and angles.
Source: Materials science forum
DOI: 10.4028/p-ad93l3
Language: English
Subfield: Industrial and Manufacturing Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4281786304