Work

Temperature dependent charge transport in ferroelectrically gated graphene far from the Dirac point

Year: 2022

Type: article

Abstract: Charge transport in ferroelectric (FE) gated graphene far from the Dirac point (DP) was studied in the temperature range 300 K < T < 350 K. A non-monotonic/monotonic/non-monotonic behavior in the conductivity [σ(T)] was observed as one moved away from the DP. As the gate polarization increased, additional impurity charges were compensated, which reduced charge scattering. The uncompensated charges doped graphene and σ(T) switched to a monotonic increase with increasing T. However, far from the DP, the polarization reached saturation, which resulted in still lower impurity charge scattering. The carrier concentration increased, and a non-monotonic response in σ(T) reappeared, which was attributed to phonon scattering. A theoretical model is presented that combined impurity charge and phonon scattering conduction mechanisms. The top gate polarizable FE provided a novel approach to investigate charge transport in graphene via controlled compensation of impurity charges, and in the process revealed non-monotonic behavior in σ(T) not previously seen in SiO2 back gated graphene devices.

Source: AIP Advances

DOI: 10.1063/5.0096776

Authors: Kelotchi S. Figueroa, Natalya A. Zimbovskaya, Nicholas J. Pinto, Chengyu Wen, A. T. Charlie Johnson

Institutions: University of Puerto Rico at Humacao, University of Pennsylvania

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funder: National Science Foundation