Year: 2022
Type: article
Abstract: A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.
Source: Nanomaterials
DOI: 10.3390/nano12142397
Authors: Chong Wang, Liang Guo, Mingzhou Lei, Chao Wang, Xuefeng Chu, Fan Yang, Xiaohong Gao, Huan Wamg, Yaodan Chi, Xiaotian Yang
Institutions: Jilin Jianzhu University, Jilin Normal University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,513
Awards: G7279316103, G991191357
OpenAlex ID: W4285393366