Work

Exploring Al(X)Ga(1-X)N Nanostructures Fabricated via Top-Down Chemical Wet Etching.

Year: 2021

Type: conference-paper

DOI: 10.2172/1870578

Authors: Barbara Kazanowska, Keshab Sapkota, Brendan Gunning, Kevin Jones, George Wang

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Funders: U.S. Department of Energy, Center for Integrated Nanotechnologies, National Nuclear Security Administration, Sandia National Laboratories

Awards: G11630931, G288067973, G413247060, G5964803810, G855168022, G872931124

OpenAlex ID: W4285469469

FWCI:

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