OpenAlex | Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation

Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation

Work

Year: 2022

Type: article

Source: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Authors Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato +1 more

Institution National Institute of Advanced Industrial Science and Technology

Cites: 5

Cited by: 5

Related to: 10

FWCI: 2.608

Citation percentile (by year/subfield): 73.23

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Sustainable Development Goal Affordable and clean energy

Open Access status: closed