Work

A 4H-SiC trench IGBT with controllable hole-extracting path for low loss

Year: 2022

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/ac8722

Authors: Lijuan Wu, Heng Liu, Xuanting Song, Xing Chen, Jinsheng Zeng, Tao Qiu, Banghui Zhang

Institution: Changsha University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4289869161

FWCI: 0.206

Cites: 19

Cited by: 4

Related to: 10