Low‐Cost and Biodegradable Thermoelectric Devices Based on van der Waals Semiconductors on Paper Substrates
Year: 2022
Type: article
Abstract: We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates. The devices are based on thin films of WS 2 , Te, and BP (P‐type semiconductors) and TiS 3 and TiS 2 (N‐type semiconductors), deposited by simply rubbing powder of these materials against paper. The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of (+1.32 ± 0.27) mV K −1 and (−0.82 ± 0.15) mV K −1 for WS 2 and TiS 3 , respectively. Additionally, Peltier elements were fabricated by interconnecting the P‐ and N‐type films with graphite electrodes. A thermopower value up to 6.11 mV K −1 was obtained when the Peltier element were constructed with three junctions. The findings of this work show proof‐of‐concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low‐cost disposable electronic devices.
Source: Energy & environment materials
DOI: 10.1002/eem2.12488
Institutions: Consejo Superior de Investigaciones Científicas, Instituto de Ciencia de Materiales de Madrid, Universidad de Salamanca, Universidad Complutense de Madrid, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Universidad Autónoma de Madrid, King Saud University, University of Nevada, Las Vegas
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,000
Funders: European Commission, King Saud University, Universidad Complutense de Madrid, Ministerio de Ciencia e Innovación, Ministerio de Asuntos Económicos y Transformación Digital, Gobierno de España, Junta de Castilla y León, European Regional Development Fund, Agencia Estatal de Investigación, H2020 European Research Council
Awards: G1268246865, G1307508345, G1581356985, G1650125035, G201582601, G2621168334, G2643395488, G2673512141, G3034934134, G3309264521, Tunable optoelectronic devices by strain engineering of 2D semiconductors, G3593493496, G3690828678, G3788430984, G380086683, G4019188119, G4117611922, G434337789, G4577294740, G490073602, G526084217, G5303049150, G5805502524, G5847513621, G5935987363, G594019444, G6298273575, G6316591333, G6577497698, G6608537260, G6731467812, G6813185341, G6841502870, G6971021052, G719725708, G7560423205, G7633275476, G8144431683, G8178315791, G8684520763, G8990726692
OpenAlex ID: W4291003822