Work

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Year: 2022

Type: article

Source: Ceramics International

DOI: 10.1016/j.ceramint.2022.08.176

Authors: Kai Chen, Yachao Zhang, Jincheng Zhang, Xing Wang, Yixin Yao, Jinbang Ma, Yue Hao

Institutions: Xidian University, China Electronics Technology Group Corporation

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G4162074646, G5369326668, G6874748396, G7438328659

OpenAlex ID: W4292822565

FWCI: 1.401

Cites: 39

Cited by: 25

Related to: 10