Work

Author Correction: How to report and benchmark emerging field-effect transistors

Year: 2022

Type: erratum

Source: Nature Electronics

DOI: 10.1038/s41928-022-00839-2

Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Institutions: National Institute of Standards and Technology, Purdue University West Lafayette, University of California, Los Angeles, Theiss Research, Peking University, New York University, IMEC, AMO (Germany), RWTH Aachen University, University of Minnesota, Stanford University, Duke University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Semiconductor Research Corporation, Deutsche Forschungsgemeinschaft, National Natural Science Foundation of China, Bundesministerium für Bildung und Forschung, Horizon 2020 Framework Programme

Awards: G178923758, G2153209581, Verbundprojekt: Neuro-inspirierte Technologien der künstlichen Intelligenz für die Elektronik der Zukunft - NEUROTEC -, Teilvorhaben: RWTH Aachen, 1D Edge Contacts to 2D Devices for Scalability and 3D Integration with Via-formed Junctions, G3228684819, G6196935697, G6579059629, G6839413216, G7101897340

OpenAlex ID: W4292953663

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Cited by: 2

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