Work

Effect of Humidity on Properties of Aqueous-Processed Tb-Doped Indium Oxide Thin-Film Transistors

Year: 2022

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2022.3204831

Authors: Penghui He, Ruohao Hong, Guoli Li, Xuming Zou, Wei Hu, Linfeng Lan, Benjamin Iniguez, Lei Liao, Xingqiang Liu

Institutions: Hunan University, State Key Laboratory of Chemobiosensing and Chemometrics, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Universitat Rovira i Virgili, Henan Normal University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, China Postdoctoral Science Foundation, Natural Science Foundation of Hunan Province, Key Research and Development Program of Hunan Province of China, China National Funds for Distinguished Young Scientists

Awards: G1626657032, G3566178959, G3867256523, G5210967326, G6416893540, G7836584701, G8441733036

OpenAlex ID: W4294811311

FWCI: 1.405

Cites: 22

Cited by: 26

Related to: 10