Chemical deposition of Cu2O films with ultra-low resistivity: correlation with the defect landscape
Year: 2022
Type: article
Abstract: Cuprous oxide (Cu2O) is a promising p-type semiconductor material for many applications. So far, the lowest resistivity values are obtained for films deposited by physical methods and/or at high temperatures (~1000 °C), limiting their mass integration. Here, Cu2O thin films with ultra-low resistivity values of 0.4 Ω.cm were deposited at only 260 °C by atmospheric pressure spatial atomic layer deposition, a scalable chemical approach. The carrier concentration (7.1014−2.1018 cm−3), mobility (1–86 cm2/V.s), and optical bandgap (2.2–2.48 eV) are easily tuned by adjusting the fraction of oxygen used during deposition. The properties of the films are correlated to the defect landscape, as revealed by a combination of techniques (positron annihilation spectroscopy (PAS), Raman spectroscopy and photoluminescence). Our results reveal the existence of large complex defects and the decrease of the overall defect concentration in the films with increasing oxygen fraction used during deposition.
Source: Nature Communications
Institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Science et Ingénierie des Matériaux et Procédés, Laboratoire des Matériaux et du Génie Physique, Institut de Microélectronique, Electromagnétisme et Photonique, Institut Néel, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes, Université Savoie Mont Blanc, Helmholtz-Zentrum Dresden-Rossendorf, Phenikaa University, Institut de Recerca en Energia de Catalunya, Université Grenoble Alpes
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $5,273
OpenAlex ID: W4295027158