Work

Electronic global-shutter one-thin-film-transistor active pixel sensor array with a pixel pitch of 50 μm and photoconductive gain greater than 100 for large-area dynamic imaging

Year: 2022

Type: article

Abstract: In large-area dynamic imaging, an active pixel sensor (APS) is proposed. However, there is a trade-off between signal-to-noise ratio (SNR) and spatial resolution. To resolve this, a 256 × 256 active pixel image sensor array based on a 3-D dual-gate photosensitive thin-film transistor (TFT) is presented in this work, with a pixel pitch of 50 μm, pixel fill factor of 63%, photoconductive gain of 102–104 and spatial resolution of 505 ppi. An electronic global shutter is enabled by dual-gate biasing without additional a shutter TFT. Such an array is capable of dynamic imaging at a frame rate of 34 Hz.

Source: Frontiers in Physics

DOI: 10.3389/fphy.2022.1000909

Authors: Yunfeng Hu, Yangbing Xu, Jinming Liu, Yihong Qi, Kai Wang

Institutions: University of Electronic Science and Technology of China, Zhongshan Institute, Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: CCD and CMOS Imaging Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,490

Funder: National Key Research and Development Program of China