Work

Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

Year: 2022

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2022.154896

Authors: F. Roccaforte, G. Greco, P. Fiorenza, S. Di Franco, F. Giannazzo, F. La Via, M. Zielinski, H. Mank, V. Jokubavicius, R. Yakimova

Institutions: Institute for Microelectronics and Microsystems, NOVASiC (France), Linköping University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: HORIZON EUROPE Framework Programme

Award: G6514006311

OpenAlex ID: W4295957262

FWCI: 0.87

Cites: 53

Cited by: 18

Related to: 10