Work

Ultra-Wide-Bandgap Aluminum Gallium Nitride Power Switching Devices (invited).

Year: 2018

Type: article

Abstract: space between photos and header Photos placed in horizontal position with even amount of white space between photos and header

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Author: Kaplar, Robert; Allerman, Andrew A.; Armstrong, Andrew; Crawford, Mary H.; Pickrell, Gregory; Dickerson, Jeramy Ray; Flicker, Jack David; Neely, Jason C.; King, Michael Patrick; Cross, Karen Charlene; Glaser, Caleb E; Van Heukelom, Michael; Baca, Albert G.; Reza, Shahed; Klein, Brianna Alexandra; Douglas, Erica Ann

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4297582192

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