Year: 2021
Type: preprint
Abstract: The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.
Source: arXiv (Cornell University)
Authors: Camenzind, Timothy N., Elsayed, Asser, Mohiyaddin, Fahd A., Li, Ruoyu, Kubicek, Stefan, Jussot, Julien, Van Dorpe, Pol, Govoreanu, Bogdan, Radu, Iuliana, Zumbühl, Dominik M.
Institutions: University of Basel, IMEC, KU Leuven
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Awards: G495187929, G8786933421
OpenAlex ID: W4297747748