Work

The behaviour of ternary compounds InGaAs and GaAsN subjected to electron irradiation.

Year: 2007

Type: article

Source: HAL

Authors: Nouri, A, Lounis, Zoubida, Ouerdane, A., Ghaffour, M., Bouadi, M., Dumont, H., Auvray, Laurent, Bouslama, M.

Institutions: École Nationale Polytechnique d'Oran, Laboratoire des Multimatériaux et Interfaces

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4298381975

FWCI:

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Related to: 10