Year: 2006
Type: article
Abstract: A MEMS gate prototype is under development to extract and accelerate charged particles for use with field emission cathodes and the nanoparticle field extraction thruster at the University of Michigan. Preliminary simulations suggest the desirability of a unity aspect ratio in the emission channel design to achieve electric field uniformity. Low emission threshold cubic boron nitride films have been grown, and gated testing with these films along with carbon nanotubes is in progress. Nomenclature A = aspect ratio J = current density AFN, BFN = Fowler-Nordheim coefficients R = emitter radius D = gap distance Rc = grid opening radius Dgate-tip = gate-tip gap distance tc = grid thickness Dgate-gate2 = distance between gates of dual gate system V = grid voltage Dsheath = sheath thickness Va = anode voltage E = electric field Vemitter = emitter voltage Es = emission surface electric field Vgate = gate voltage I = emission current Vsheath = sheath voltage
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4300095605