Simulation-based study on characteristics of dual vertical transfer gates in sub-micron pixels for CMOS image sensors
Year: 2022
Type: article
Source: Solid-State Electronics
Authors: Wook Lee, Seonghoon Ko, Jae Ho Kim, Yoon-Suk Kim, Uihui Kwon, HyunChul Kim, Dae Sin Kim
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Topic: CCD and CMOS Imaging Sensors
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4302286433