Work

High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers

Year: 2022

Type: conference-paper

Source: European Microwave Conference (EuMC)

DOI: 10.23919/eumc54642.2022.9924448

Authors: Gijs van der Bent, Peter de Hek, Rob Knight, Frank E. van Vliet

Institution: Netherlands Organisation for Applied Scientific Research

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4308086281

FWCI: 1.213

Cites:

Cited by: 3

Related to: 10