Work

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

Year: 2022

Type: article

Abstract: 1.2kV 4H-SiC MOSFETs with different junction depths of JFET and P-well regions were fabricated. For each JFET/P-well depth combination, channel lengths and JFET widths were also varied to compare specific on-resistance, breakdown voltage, and short-circuit withstand time. It was discovered that deep JFET structure provides low specific on-resistance (12% lower) with high breakdown voltage. On the other hand, MOSFETs with deep P-well result in high breakdown voltage with low leakage current even in shorter channel length (0.4 lm). Moreover, trade-off relationship between Ron,sp and short-circuit withstand time is discussed for MOSFETs with different JFET widths and channel lengths; the deep JFET implant provides better trade-off relationship due to the feasibility of narrow JFET width. For the further improvement of trade-off relationship, MOSFETs with deep JFET and P-well implant are proposed. Lastly, the importance of high channel mobility for not only static characteristics but also short-circuit characteristics was investigated. The in-depth understanding of measured electrical characteristics was supported by 2D-device simulations.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2022.3218689

Authors: Dongyoung Kim, Nick Yun, Adam J. Morgan, Woongje Sung

Institution: SUNY Polytechnic Institute

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funders: U.S. Department of Energy, State University of New York, State University of New York Polytechnic Institute, Vehicle Technologies Program