Year: 2022
Type: article
Abstract: Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance computing applications, due to its lower power consumption, higher bit density, and the ability to reduce the access transistor size when compared to conventional current-controlled spin-transfer torque MRAM. The key to realizing these advantages is to have a low MTJ switching voltage. Here, we report a perpendicular MTJ structure with a high voltage-controlled magnetic anisotropy coefficient ~130 fJ/Vm and high tunnel magnetoresistance exceeding 150%. Owing to the high voltage-controlled magnetic anisotropy coefficient, we demonstrate sub-nanosecond precessional switching of nanoscale MTJs with diameters of 50 and 70 nm, using a voltage lower than 1 V. We also show scaling of this switching mechanism down to 30 nm MTJs, with voltages close to 2 V. The results pave the path for the future development and application of voltage-controlled MRAMs and spintronic devices in emerging computing systems.
Source: Communications Materials
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,190
Awards: G1454922299, G2635024955, G2639066229, Spintronic Spectrum Analyzer and Limiter based on Tunable Magnetic Tunnel Junction Arrays, G3742780009, G3873851634, NSF-BSF: CNS Core: Small: Reliable and Zero-Power Timekeepers for Intermittently Powered Computing Devices via Stochastic Magnetic Tunnel Junctions, NSF Nanosystems Engineering Research Center for Translational Applications of Nanoscale Multiferroic Systems TANMS, G5705301974, G7661097341, PFI-RP: Partnership to develop next-generation memory chips for intelligent computing systems.
OpenAlex ID: W4309001039