Work

Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C

Year: 2022

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0002257

Authors: Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang, Timothy Jinsoo Yoo, Eitan Hershkovitz, Fan Ren, Honggyu Kim, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, S. J. Pearton

Institutions: University of Florida, Seoul National University, Korea Institute of Ceramic Engineering and Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Korea Institute for Advancement of Technology, National Research Foundation of Korea, Defense Threat Reduction Agency

Awards: G5442972664, G6661510054, G772299097, Impact Ionization Coefficients in Ga2O3

OpenAlex ID: W4309048497

FWCI: 0.059

Cites: 47

Cited by: 5

Related to: 10