Work

On-chip Multiplexing of Si/SiGe Quantum Devices.

Year: 2021

Type: conference-paper

Abstract: reviewed. Among those to be discussed are resonant tunneling, miniband transport, and intersubband absorption in Si{sub 1-x}Ge{sub x}/Si superlattice structures, optical properties of monolayer Si{sub m}Ge{sub n} superlattices, and observation of large Stark effect associated with interband transition between quantized states in Si{sub 1-x}Ge{sub x}/Si quantum well structures.

DOI: 10.2172/1891081

Authors: Michael Wolfe, Tom McJunkin, Mark Eriksson, Daniel Ward, DeAnna Campbell, Lisa Tracy

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Funders: U.S. Department of Energy, National Nuclear Security Administration, Army Research Office, Sandia National Laboratories

Awards: G11630931, G2214935549, G3141641755, G413247060, G4187720936, G4903105778, G5339743583, G6526374922, G7452299184, G855168022

OpenAlex ID: W4310281051

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