Work

Exploring Al(X)Ga(1-X)N Nanostructures Fabricated via Chemical Wet Etching.

Year: 2021

Type: conference-paper

Abstract: 2}-MeOH and mixtures of HCl and HNO{sub 3} the etch rates follow a linear dependence on AlP mole fraction. HF has been found to be a good etchant for AlGaP over InGaP or AlInP with high selectivity, while HCl is useful for the reverse case. The use of 1% Br{sub 2}-MeOH or the mixtures of HCl and HNO{sub 3} provides little selectivity between AlGaP, InGaP, AlInP, and GaAs.

DOI: 10.2172/1889371

Authors: Barbara Kazanowska, Keshab Sapkota, Brendan Gunning, kevin jones, George Wang

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: U.S. Department of Energy, Center for Integrated Nanotechnologies, National Nuclear Security Administration, Sandia National Laboratories

Awards: G11630931, G2214935549, G288067973, G413247060, G4903105778, G5339743583, G855168022, G872931124

OpenAlex ID: W4310285397

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