Year: 2022
Type: article
Abstract: The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous coexistence of ferromagnetic and antiferromagnetic interactions between two neighboring spins-an extraordinary property not available in nature. We demonstrate that the statistics of circuit states may perfectly match the ones found in the Ising model with ferromagnetic or antiferromagnetic interactions, and, importantly, the corresponding Ising model parameters can be extracted from the probabilities of circuit states. Using this finding, the Ising Hamiltonian is reconstructed in several model cases, and it is shown that different types of interaction can be realized in circuits of stochastic memristors.
Source: Physical review. E
Authors: Vincent J. Dowling, Yuriy V. Pershin
Institution: University of South Carolina
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4311015671