Work

600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects

Year: 2022

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2022.3232474

Authors: Junjie Yang, Jin Wei, Yanlin Wu, Muqin Nuo, Zhenghao Chen, Xuelin Yang, Maojun Wang, Bo Shen

Institution: Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G8130179350

OpenAlex ID: W4313229740

FWCI: 2.181

Cites: 30

Cited by: 28

Related to: 10