Work

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Year: 2023

Type: article

Source: Journal of Luminescence

DOI: 10.1016/j.jlumin.2023.119749

Authors: Orhan Özdemir, Hanife Baş, Neslihan Ayarcı Kuruoğlu, Kutsal Bozkurt, Mustafa Aydın, Fahrettin Sarcan, Ayşe Erol, Bandar Alshehri, Karim Dogheche, Elhadj Dogheche

Institutions: Yıldız Technical University, Istanbul University, Centre National de la Recherche Scientifique, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Polytechnique Hauts-de-France

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Yildiz Teknik Üniversitesi

Award: G8843632347

OpenAlex ID: W4319719439

FWCI: 0.091

Cites: 38

Cited by: 1

Related to: 10