Work

Enhanced resistive switching performance of spinel MnCo2O4 resistive random access memory devices: Effects of annealing temperatures and annealing atmospheres

Year: 2023

Type: article

Source: Current Applied Physics

DOI: 10.1016/j.cap.2023.02.004

Authors: Ling Du, Jiacheng Li, Yu Zhang, Ni Qin, Dinghua Bao

Institutions: Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: 纳米复合尖晶石铁氧体薄膜的电致阻变及磁性调控机理研究, G6803444207, G7938533157

OpenAlex ID: W4319786849

FWCI: 0.954

Cites: 53

Cited by: 13

Related to: 10