Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation
Year: 2022
Type: article
Abstract: In this work, the authors have considered the effect of short-term nonthermal action of microwave radiation on the photoluminescent characteristics of SiC/por-SiC/Er2O3 and SiC/por-SiC structures. The analysis of photoluminescence spectra of these structures, which are excited by radiation with an energy lower than the band gap in the 4H-SiC crystalline substrate, has shown that short-term action of microwave radiation leads to redistribution of radiative recombination centers, which is caused by surface states in the por-SiC layer.
Institution: V.E. Lashkaryov Institute of Semiconductor Physics
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4320021369