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Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well

Year: 2023
Type: article
Abstract: Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov--de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The $g$ factor of the two-dimensional hole system decreases rapidly with increasing carrier density.
DOI: 10.1103/physrevresearch.5.013117
Authors: Zijin Lei, Erik Cheah, Filip Krizek, Rüdiger Schott, Thomas Bähler, Peter Märki, Werner Wegscheider, Mansour Shayegan, Thomas Ihn, Klaus Ensslin
Language: English
Open Access status: gold
Estimated APC paid: $2,471
Funders: National Science Foundation, Gordon and Betty Moore Foundation, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Eidgenössische Technische Hochschule Zürich, QuantERA, National Center of Competence in Research Quantum Science and Technology
OpenAlex ID: W4320914821
FWCI: 1.163
Cites: 73
Cited by: 10
Related to: 10